On-chip magnetic thin-film noise suppressor for IC chip level digital noise countermeasure

Crossed anisotropy amorphous Co
₈₅
Zr
₃
Nb
₁₂
thin film with total magnetic thickness of 2.0 μm is deposited on to the passivation of a bare IC chip to accommodate intra IC chip level digital-to-RF noise suppression and telecommunication performance. On-chip magnetic film processes can be done as the last steps of Si CMOS back end processes. Radiated emission from embedded arbitrary noise generator is suppressed by more than 10 dB. In-band spurious tone is attenuated by 10 dB. Minimum input power level to meet the 3GPP criteria is improved by 8 dB. All of these results are achieved on the fully LTE compliant RF receiver chain.