A Novel Trench-Gated Power MOSFET With Reduced Gate Charge

In this letter, we propose a novel trench power MOSFET structure with a p-n junction in trench to reduce the gate charge. We utilize the 2-D device simulator, ATLAS, to investigate the characteristics of the proposed structure and compare with the conventional structure. As a result, the proposed structure exhibits 49.5% enhancement in gate-charge Q
_g
as compared with the conventional structure, without degrading the other electrical characteristics.