Highly efficient light extraction GaN-based light emitting diode with nano-rods in micro-holes compound structure

We demonstrated a high-power GaN-based light emitting diodes (LEDs) which have micro-hole array and nano-rods compound structure by nanoimprint lithography (NIL). The nanorods structure inside the micro-hole could efficiently guide the trapped light from the GaN epilayer. Therefore, the light output power of LED with micro-hole array and nanorods was as high as 1.27 times, as compared with standard LED.