Zero-bias GaN implanted Self-Switching Diode coupled with bow-tie antenna for THz applications

Nanometer-scale devices known as Self-Switching Diodes represent a new interesting component for Terahertz applications. It is shown for the first time than the use of ion implantation rather than etching to define an asymmetric nanochannel lead to an improved device rectification, thus higher responsivity. In this paper, we report on the first integration of implanted Gallium nitride self-switching diode with bow-tie antenna. The responsivity obtained in free space condition has been compared with the same device topology measured on wafer. The results show a highly reproducibility of the technological process and validates the first step toward practical terahertz applications of this nanorectifier at room temperature.