GaN-Based Power Flip-Chip LEDs With SILAR and Hydrothermal ZnO Nanorods

In this paper, we present a simple and low-cost method combined successive ionic layer adsorption and reaction with Hydrothermal to form ZnO nanorods for GaN-based power flip-chip light-emitting diodes (LEDs). With 350-mA current injection, it was found that forward voltages were all 2.97 V when the 350-mA output powers were 361.7, 420.7, 426.8, 448.2, and 430.4 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. It was also found that the light output power of LED IV was 24% larger than that of LED I. Furthermore, it was also found that the formation of ZnO nanorods on the top of sapphire will not degrade the electrical properties.