Design And Growth Of Short-wavelength InAlGaP Visible Vertical-cavity Surface-emitting Laser Diodes

Vertical-cavity surface-emitting laser (VCSEL) diodes offer numerous advantages over edge-emitting lasers including surface-normal output, ease of fabrication into 2-dimensional arrays, low angular divergence (6-10°), and the potential for on-wafer testing. Visible VCSEL diodes should be advantageous for applications such as plastic-fiber communications, optical data storage, scanning and 2-dimensional displays. However, while electrically injected VCSEL diodes have been demonstrated at IR wavelengths by many groups, it is only recently that electrically-injected lasing has been achieved in an InAlGaP-based visible VCSEL [l]. In the present work we describe the materials growth and device design issues leading to this demonstration, with emphasis on approaches for short-wavelength (h1650 nm) operation.