Proposal Of Novel Blue-green Diode Laser Based On Mgznsete Alloy

There are many obstacles in developing a CW room temperature blue-green diode laser with the high band gap 11-VI compounds. The most significant ones are inability to readily dope these materials both p-type and n-type (amphoteric doping), the lack of a lattice matched heterosturcture with good carrier confinement, and poor ohmic contacts. ZnSe is known to have residual n-type conductivity, and it’s doping has been extensively studied. A breakthrough in p-type doping has been demonstrated only 3 years ago by applying the nitrogen radical doping technique in molecular beam epitaxy (MBE)1. This lead Haase et al2 to successfully fabricate the first blue-green laser diode operating at 77 K, based on a ZnCdSeEnSe strained-layer SQW structure.