P-type Doping Of Wide-bandgap IIU-Vi Semiconductors: Reference To ZnSe:N

The recently announced successful demonstration of ZnSe-based blue-green diode lasers [1,2] is due, to a significant extend, on our ability to dope ZnSe and related alloys p-type during MBE growth using an Oxford Applied Research rf plasma discharge, nitrogen free-radical source. [3,4] It was shown early on, in fact, that resistivities as low as 0.75 Ωcm could be achieved in p-type ZnSe grown with the OAR radical source, such resistivity measurements being made employing a non-contact inductively-coupled rf bridge apparatus. [5]