Using rapid developing and developing speed model to decrease line width in electron beam lithography

In this paper, we have established a developing speed model for electron beam lithography. By applying this model and a rapid developing method, we successfully decrease the line width by 51%. Furthermore, we can easily narrow down the line width without adding complex processes on the substrate. Some researches has used many ways to supress the scatterings of electron intensity distribution and control the beam profiles by simulations. In the other hand, we limit the level of developed patterns. This method is easier to perform, however, has not been studied formerly. Aiming for Nano structural devices, this model is valuable and worth studying.