Fabrication of InGaAs quantum nanodisks array by using bio-template and top-down etching processes

III-V compound semiconductor quantum dot (QD) optical devices, such as high-power lasers and high-speed modulators, have great potential for the future of telecommunications and quantum cryptographic communication. We developed a top-down method for fabricating InGaAs quantum nanodisks (NDs) arrays by using bio-template and neutral beam etching (NBE) processes. Damage-free InGaAs/GaAs nano-pillar structures were successfully fabricated for the first time. After NBE, InGaAs NDs were embedded in the GaAs barrier layer by metalorganic vapor phase epitaxy. Subsequently, the photoluminescence was measured and the emission originating from the NDs could be directly detected.