Characterisation of the charge transport mechanism in pulsed laser deposited AlN:Si films

AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge transport through the films.