Passivation of SiO2/SiC interface with La2O3 capped oxidation

Thermal oxidation of SiC(0001) substrates with La
2
O
3
capped annealing has been performed. La
2
O
3
capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping at step bunches and effectively suppresses the Dit.