Electrical Stress and Total Ionizing Dose Effects on ${\hbox {MoS}}_{2}$ Transistors

Electrical stress and 10-keV x-ray irradiation and annealing responses are evaluated for back-gate MoS
₂
transistors. Relative stability of device characteristics is observed for constant-voltage stress. The drain current decreases significantly after both positive and negative bias irradiation. Density functional theory calculations and ozone exposure experiments suggest that O atoms adsorbed on the MoS
₂
surface during 10-keV x-ray irradiation function as electron traps, causing mobility degradation and voltage shifts.