Assessment of resistance of AlAs/GaAs nanoscale heterostructures of resonant-tunneling diodes to diffusion destruction by means of IR-spectroscopic ellipsometry

In the course of the work the procedure of the quality assessment of AlAs/GaAs resonant-tunneling heterostructures with relation to their resistance to diffusion destruction was developed. The diffusional blurring of the AlAs/GaAs heterostructure layers was detected by the means of IR-spectroscopic ellipsometry. The coefficient of Al and Si diffusion in GaAs was also calculated.