Dimension effect in a linear model of a Ka-band GaN HEMT

It is shown that electrophysical property fractality (for example, ρ=ρ(l,d)) of a heteroepitaxial AlGaN/GaN structure with two-dimensional electron gas has a strong influence on field effect transistor linear model. In the present work influence of fractality on inner elements values of transistor equivalent circuit is described. It is necessary to take this influence into the account during design and manufacturing of either power or low noise AlGaN/GaN HEMT.