Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. Lg = 32 nm devices exhibit peak transconductance of 1.8 mS/μm at V
_ds
= 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-π model is developed, which includes both the effect of impact ionization and border traps and shows good fit to measurement data. Simultaneously extracted ft and fmax are 280 and 312 GHz, respectively, which are the highest reported values of any III-V multiple-gate MOSFET.