Cubic structure sic p-i-n diode as rf switch

The paper presents the switching characteristics, insertion loss and isolation of 3C-SiC based p-i-n diode as microwave switch. The resistance of the switch is a function of frequency and also depends on characteristics and the geometric structure of intrinsic region. At higher frequency (~50GHz) the switch offers low resistance and the switch has high resistance at low frequency but it would have lower isolation. This diode can be used as single pole single through (SPST) switch or single pole double through (SPDT) switch or single pole multi through (SPMT) switch. The results of 3CSiC have been compared with that of GaAs p-i-n diode and it reveals that SiC is superior compare to GaAs.