Design and simulation analysis of RF MEMS dual output switch for Ku-band applications

This paper presents the design, fabrication and characterization of RF MEMS dual output switch implemented in silicon substrate of thickness 5 μm. The topology of the switch is cantilever based microelectro mechanical system(MEMS) switch for the performance in the Ku band of frequency for satellite payload application. Along with the process of fabrication, design simulation and the analysis of RF performance parameter characterization of the switch exhibit an insertion loss of around 0.8dB and isolation in the range of 47dB.for the switch structure in Ku band of frequency(12-18GHz).