Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs

We fabricated Fully-Depleted (FD) nMOSFETs on strain-SOI substrates (sSOI), exceeding regular FDSOI devices by +20% in nMOS ON-state current (I_ON) and +18% in SRAM read current. For pMOSFETs on sSOI, the integration of Si_0.57Ge_0.43 by the Ge-enrichment technique (in so-called sSGOI) is the solution to reach the performance of Si_0.78Ge_0.22 channels built on SOI (SGOI) in terms of short channel hole mobility and I_ON. We analyse the layout effects in sSOI/sSGOI transistors, ring oscillators (ROs) and SRAMs for different Ge amounts and strains and report for the first time the carrier mobility in sSOI/sSGOI vs. the active length (L_ac). Through a layout optimization, a high uniaxial strain can be created, boosting the carrier mobility in both sSOI/sSGOI by 10/20% and ensuring the scalability of the planar FDSOI architecture for the 10nm node.