Improved ion source stability using H2 co-gas for fluoride based dopants

Fluoride based gases are commonly used in the ion implantation. Gases such as GeF
₄
, SiF
₄
use as pre-amorphization species and BF
₃
is for high dose p-type BF
₂
and
¹¹
Boron can be a productivity challenge for conventional ion implanters used for semi-conductor device applications. As device geometries continuously shrink, there is a trend to deliver higher beam currents at lower energies, with a corresponding reduction in particles and metal contamination.