Damage engineered Se implant for NMOS TiSix contact resistivity reduction

Low specific contact resistivity (7E-9 Ohm.cm
²
) was achieved for contacts with TiSi
_x
to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSi
_x
/Si:P interface, to realize the SBH-lowering benefits of Se.