Total ionizing dose effects on the digital performance of irradiated OCTO and conventional fully depleted SOI MOSFET

This paper investigates and compares experimentally the total ionizing dose (TID) effects in digital parameters of the fully depleted (FD) OCTO Silicon-On-Insulator (SOI) n-type Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) (OSM), that presents an octagonal gate geometry, versus its conventional (rectangular gate geometry) counterpart (CSM). The main digital parameters taken into account in this study are the threshold voltage (V
_TH
), subthreshold slope (SS), on-state drain current (I
_ON
) characteristics. This work demonstrates that OCTO layout style achieved higher radiation tolerance in terms of V
_TH
and SS relative variation and keeping the higher I
_ON
performance, due to the LCE and PAMDLE effects existent in the OCTO layout style. In addition the OSM had a significant improvement in terms of the leakage drain current (I
_LEAK
), whereas the CSM I
_LEAK
performance was degraded.