A Diamond:H/MoO3 MOSFET

A p-type MOSFET based on a heterointerface of hydrogenated-diamond transfer doped with MoO
₃
(Diamond:H/MoO
₃
) is demonstrated for the first time. This is an important new heterostructure system due to its potentially improved temperature stability as compared with the better established Diamond:H/H
₂
O system. MOSFETs using HfO
₂
as gate insulator show excellent output characteristics and gate control over the 2-D hole gas at the Diamond:H/MoO
₃
interface. In 3.5-μm gate length devices, we obtain a maximum drain-current ON-OFF ratio of three orders of magnitude and a maximum transconductance of 2.5 μS/μm.