Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets by using an Aqueous Solution at Room Temperature

In this paper, gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by using aqueous solution method. It was found that the GaZnO nanosheets grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The turn-on fields of ZnO and GaZnO nanosheets were 5.9 and 4.67 V/μm, and field enhancement factors (β) were 1966 and 4037, respectively. The results indicate that Ga-doped ZnO nanosheets exhibit enhanced field emission (FE) properties and are a promising candidate in future FE-based device applications.