Capacitive coupling analysis of TSV array in 3D packaging

In 3D-TSVs (through silicon vias) interposer layer, the capacitive coupling effects of TSV array are modeled and analyzed for signal transmission. To consider the semiconductor characteristics, the multi-conductor model is presented to model the TSV array by combining the MOS capacitance with the passive RLGC parameters. After that, the values of MOS capacitance and RLGC are extracted. Finally, by using model order reduction, the capacitive coupling characteristic of TSV array is simulated and analyzed for the signal transmission.