Optimization of tellurium doped InGaAs grown by MOCVD for solar cell tunnel junctions application

InP based solar cells utilize tunnel junctions consisting of highly doped n and p type InGaAs layers. Tellurium doped bulk InGaAs was grown by MOCVD on InP substrates and optimized for highest doping level as a function of MOCVD growth conditions. In addition the material was optimized for surface morphology and crystal quality. Temperature, V-III ratio, and strain growth parameters have been explored based on constant Te flux.