Temperature dependence of Ga:ZnO film deposited by RF magnetron sputtering

This paper investigate the dependence of substrate temperature onto characteristic of Gallium doped Zinc Oxide (Ga:ZnO). Ga:ZnO films were deposited on a glass substrate by RF Magnetron Sputtering using Ga:ZnO ceramic target with 99.99% purity. Sputtering power, argon flow and target distance were fixed in order to investigate the influence of substrate temperature to the growth characteristic, structural and optical properties of the films. Sputtering was performed with RF power of 100 Watt and the argon flow in was set at 10 sccm. The deposition times were fixed at 40 minute for all films. The result shows growth rate for Ga:ZnO growth at higher temperature are lower than at room temperature. Ga:ZnO thin films on different substrate temperature were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency over 80 percent were achieved.