Breakdown of the quantum Hall effect in epitaxial graphene

We present the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic field. At 2 K, breakdown currents (I
_c
) almost 2 orders of magnitude greater than in GaAs devices are observed. We use this knowledge to explore the potential of using graphene as a high temperature (> 2 K) and low magnetic field (<; 5 T) quantum resistance standard.