Defect localization enhancement using light induced CI-AFP

This paper describes the effectiveness of using light induced Current Imaging — Atomic Force Microscopy (CI-AFP) to localize defects that are not easily detected through conventional CI-AFP. Defect localization enhancement for both memory and logic failures has been demonstrated. For advanced technology nodes memory failures, current imaging from photovoltaic effects enhanced the detection of bridging between similar types of junctions. Light induced effects also helped to improve the distinction between gated and non-gated diode, as a result enhanced localization of gate to source/drain short.