Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)

We demonstrate a selector device with excellent performances (J
_MAX
> 10
⁷
A/cm
²
, switching speed <; 20ns) at the 30nm cell size. Furthermore, these promising device characteristics were achieved in a fully CMOS compatible stack (W/Ta
₂
O
₅
/TaO
_x
/TiO
₂
/TiN) with extremely thin oxide layer (<; 10nm). Through the comprehensive understanding on the exponential I-V curve, the effect of intrinsic/extrinsic factors such as scaling (area and thickness), and parasitic components were systemically investigated.