Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond

We demonstrate high performance (HP) s-SiGe pMOS finFETs with I
_on
/I
_eff
of ~1.05/0.52mA/μm and ~1.3/0.71mA/μm at I
_off
=100nA/μm at V
_DD
=0.8 and 1V, extremely high intrinsic performance and source injection velocity. Compared to earlier work, an optimized process flow and a novel interface passivation scheme, result in ~30% mobility enhancement and dramatic sub-threshold-swing reduction to 65mV/dec. We also demonstrate the most aggressively scaled s-SiGe finFET reported to date, with W
_FIN
~8nm and L
_G
~15nm, while maintaining high current drive and low leakage. With their very low GIDL-limited I
_{D, min}
and more manufacturing-friendly process compared to high-Ge content SiGe devices, as well as impressive I
_on
~0.42mA/μm at I
_off
=100nA/μm and g
_{m, int}
as high as 2.4mS/μm at V
_DD
=0.5V, s-SiGe finFETs are strong candidates for future HP and low-power applications.