Porous silicon nanowire arrays with excellent antireflection property

Light trapping enhancement by porous silicon nanowire (SiNW) arrays were reported. Porous SiNW arrays were fabricated by an improved metal-assisted chemical etching method. A mechanism of Ag nanoparticles-induced silicon nanowires etching was proposed to explain nanopores formation. The obtained porous SiNW arrays exhibit excellent antireflection property of below 2% in the wavelength range of 300-1000nm, which can be applicable to solar cells.