Design optimization of segmented-channel MOSFET using high-K dielectric material

Conventional MOSFET designs face many challenges as they are scaled down. The increased short channel effects in conventional MOSFET device paves the way for many device architectures. One such is the segmented-channel MOSFET (SegFET) structure, a more evolutionary solution for continued bulk MOSFET scaling. SegFETs are fabricated using a conventional process. The channel of the device is segmented. The areas between the channel stripes are filled with high-K material (Hafnia). This device also provides a higher performance, reduced short channel effects and reduced power consumption.