ARC for sub-0.18 /spl mu/m logic and gigabit DRAM frontend and backend processes

We have developed different Si/sub x/O/sub y/N/sub z/ antireflective coating (ARC) films for many different substrates for deep-UV lithography and implemented then into sub-0.18 /spl mu/m logic and Gigabit DRAM frontend and backend processes. The Si/sub x/O/sub y/N/sub z/ film has dual functions: reducing substrate reflectivity to a minimum, and serving as a hardmask for poly and metal etch. These properties of Si/sub x/O/sub y/N/sub z/ are crucial to tight CD control and fabrication of unique device structures. Plasma damage from ARC deposition is negligible. Using the designed Si/sub x/O/sub y/N/sub z/ and linewidth reduction etch, sub-0.1 /spl mu/m metal gate nMOSFETs are demonstrated. Backend sub-0.25 /spl mu/m multilevel metal patterning and etch with Si/sub x/O/sub y/N/sub z/ produce excellent metal profiles and 100% comb yield. A designed ARC also produces superior 1 Gigabit DRAM 0.16 /spl mu/m storage node contact patterning.