Properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films grown by MOCVD for high density FeRAM applications

A new, low temperature SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) MOCVD process exhibiting excellent run-to-run repeatability has been developed for high density FeRAM applications. 90% step coverage and good adhesion were achieved on feature sizes down to 0.5 μm on both Pt or SiO/sub 2/ surfaces. Postanneal process optimization resulted in an increase of remanent polarization of about 30%. Electrical characterization showed dielectric constants (ε) of ⩾200 and remanent polarization values (2Pr) of up to 23 μC/cm/sup 2/. Endurance has been demonstrated up to 10/sup 11/ cycles.