A 62ns 16Mb CMOS EPROM With Address Transition Detection Technique

To meet the increasing demand for dense fast EPROMs, a 16Mb CMOS EPROM uses a 0.6μm n-well CMOS technology and address transition detection (ATD).1 This device typically achieves a 62ns access time with a 12mA operating current. A sense-line equalization and a data-out latching scheme, enabled by ATD, and a bit-line bias circuit with two types of depletion load lead to fast access with high noise immunity. In scaled EPROMs, it is important to guarantee device reliability with high-voltage operation used in programming. An internal method of programming-voltage reduction and stress relaxation circuits, make it possible to use an external programming voltage, VPP' of 12.5V. This 16Mb EPROM has pin compatibility with a standard 16Mb mask programmable ROM, and operates in either word-wide or byte-wide read mode.