Cu/dielectric hybrid bonding using surface-activated bonding (SAB) technologies for 3D integration

Surface activation is of great importance for low temperature wafer bonding technology development. We developed new low temperature Cu/dielectric hybrid bonding process by using surface-activated bonding technologies for 3D integration application. We report the surface analysis results of the hybrid surface treated by Ar plasma and Ar FAB, and discuss the effects of different surface activation processes on wafer bonding, and conclude with prospects for the future.