Temperature Resolution of Pb1−xSnxTe:In-based photosensing film structures under illumination with blackbody radiation

In the present study, we examined the sensitivity of PbSnTe:In to radiation in the very-long-wave infrared spectral region. Experimental data on the dynamics of increase of the photocurrent in PbSnTe:In films illuminated with radiation emitted by a model blackbody are reported. The range of radiator temperatures was 50 to 75 K, and the temperature of examined samples was 4.2 K. Photocurrent relaxation curves measured on turning-on and turning-off of the illumination are presented. Specific features of charge-carrier transport at helium temperatures in samples dominated by contact injection of carriers are discussed. The response of the current to blackbody-radiator temperature modulation was studied. The temperature sensitivity has been estimated as amounting to ~ 44 nA/K.