Study of gallium nitride surface treatment prior to PE CVD SiNx:H passivation

The PE NH
₃
pretreatment followed by the wet chemical cleaning of GaN surface in an aqueous solution on the base of NH
₄
OH, HCl and HF prior to PE CVD SiN
_x
:H passivation allowed to improve electrophysical characteristics MIS-structures formed on GaN.