A new method for extracting the capacitance coupling coefficients of sub-0.5-/spl mu/m flash memory cells in the negative gate bias mode

A new method for extracting the capacitance coupling coefficients of sub-0.5-/spl mu/m flash memory cells under a negative gate bias is proposed. In contrast to previously developed methods, this method is not affected by the source region dopant profile. Hence, it has the potential to be applied continuously to flash memory cells with reduced dimensions. Using a reference device eliminates the need to make assumptions concerning the electron transport mechanism. Also, another easy method for extracting the gate capacitance coupling coefficient is proposed to provide confirmation.