An analysis of hot-carrier-induced photoemission profiles in n-MOSFETs

Experimental results for high electric field effects in n-MOSFETs with L=0.35/spl sim/2.0 /spl mu/m are presented with a spatial resolution of 27 nm/pixel on a CCD imager. Profiles of photoemission induced by hot-electrons have been measured with a photoemission microscope along the channel length direction. Under the bias condition of maximum substrate current, photoemission peaks are located at the LDD-drain edge or the n/sup +/-drain edge for the devices with L=0.35 or L/spl ges/0.40 /spl mu/m, respectively. A peak position only in the 0.35 /spl mu/m device shifts toward the drain side by about 80 nm at V/sub D/=7.0 V. Since V/sub D/ does not affect peak positions in the L/spl ges/0.40 /spl mu/m devices, the L=0.35 /spl mu/m device may have a different photoemission mechanism.