Study of low frequency noise in scaled down silicon CMOS transistors

Summary form only given. A detailed investigation of the low frequency (LF) noise in 0.25 /spl mu/m NMOS and PMOS devices is carried out. A theoretical analysis of the drain current noise and the gate voltage noise characteristics is developed in the framework of a carrier number fluctuation model as well as corrected mobility fluctuations. The scattering parameter is found to be lower for NMOS transistors, while the value of PMOS is relatively high, in agreement with static mobility data. This justifies the enhancement of the correlated mobility noise for PMOS devices.