RF characterization of vertical InAs nanowire MOSFETs with ft and fmax above 140 GHz

We present RF characterization of vertical gate-all-around InAs nanowire MOSFETs integrated on Si substrates with peak f
t
= 142 GHz and f
max
= 155 GHz, representing the record for vertical nanowire transistors. The devices has an Lg ≈ 150 nm with a g
m
=700 mS/mm for a nanowire diameter of 38 nm and an EOT = 1.4 nm. The high values of f
t
is achieved through electron beam lithography patterning of the gate and drain contact which substantially decreases the parasitic capacitances through reduction of the overlay capacitance, which is in good agreement with TCAD modeling.