Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

Asymmetric In
_0.53
Ga
_0.47
As MOSFETs with different regrown contacts at source (In
_0.53
Ga
_0.47
As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g
_m
/g
_d
has been obtained with reduced output conductance g
_d
and improved break-down voltage V
_bd
. For L
_g
=100nm, a high oscillation frequency f
_max
=270GHz has been obtained using an InP drain.