Infinite Output Resistance of Corbino Thin-Film Transistors With an Amorphous-InGaZnO Active Layer for Large-Area AMOLED Displays

We report a low-voltage-driven amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor-based Corbino (circular) thin-film transistor (TFT) with infinite output resistance beyond pinchoff. The Corbino TFT has inner and outer concentric ring electrodes, and when the latter is the drain, channel width (W) decreases with channel length (L), such that the W/L ratio is not changed after pinchoff. As demonstrated herein, this a-IGZO Corbino TFT is, therefore, a good candidate for uniform current drivers in applications, such as active-matrix organic light-emitting diode display pixels, where it would maintain the same drive (diode) currents, even with variations in supply voltage (V
_DD
).