Modeling capacitive non-linearities and displacement currents of high-voltage SuperJunction MOSFET in a novel analytical switching loss model

This work presents a new analytical model to predict power losses and waveforms of high-voltage silicon SuperJunction (SJ) MOSFETs during hard-switching operation. This model includes original features accounting for strong capacitive non-linearities and displacement currents. Moreover, these features demand unusual extraction of electrical characteristics from regular datasheets. The high accuracy of the model is validated with experimental measurements in a buck converter by using commercial SJ MOSFETs, as well as, advanced device prototypes under development.