High-frequency integrated gate drivers for half-bridge GaN power stage

This paper describes three driver options for integrated half-bridge power stage using depletion-mode GaN-on-SiC 0.15μm RF process: an active pull-up driver, a bootstrapped driver, and a modified active pull-up driver. The approaches are evaluated and compared in 5 W, 20 V synchronous Buck converter prototypes operating at 100 MHz switching frequency over a wide range of operating points. Measured efficiency peaks above 91% for the designs using the bootstrap and the modified active pull-up integrated drivers.