Observation of suppressed dark current of Ge on Si (100) using ultrathin Ge seed layer

In this study, we investigated the effect of the Ge LT layer thickness in HT/LT 2-step Ge growth on the I–V characteristics. Even the ultrathin 5-nm-thick LT layer could lower the dark current caused by the defects due to the effective defect termination between Ge/Si interfaces.