Thermal chemical vapor deposition of epitaxial germanium tin alloys

A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]∼24 at.% and [Sn]∼4 at.% was achieved by flowing SiH
4
during GeSn growth.