Optimization of ISBD embedded SiGe layers to prevent delamination process for MOSFET applications

Embedded strained SiGe (eSiGe) layers applied for source/drain applications enhance hole mobility of the transistor by inducing uniaxial compressive strain into Si-channel [1, 2], One of the common SiGe techniques used for source/drain (S/D) formation is in situ boron doped (ISBD) SiGe epitaxy. It is well known that ISBD eSiGe S/D device exhibits higher drive current than a boron-implanted eSiGe S/D device due to the fact that almost all B atoms locate into substitutional sites of SiGe lattice structure.